Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy
- 30 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (18) , 1784-1786
- https://doi.org/10.1063/1.103099
Abstract
We have investigated the lattice location of Sn atoms in Sn-doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of ≊2×1014 atoms/cm2 of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within ≊20 Å of the surface of the GaAs. Angular scans of the Ga Kα, As Kβ, and Sn L x rays across the 〈100〉, 〈110〉, and 〈111〉 axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 Å from the substitutional sites was detected.Keywords
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