Determination of substitutional dopant and hole concentrations in Zn-diffused single-crystal InP
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9) , 760-762
- https://doi.org/10.1063/1.91642
Abstract
Proton‐induced x‐ray emission combined with channeling techniques has been used to evaluate Zn‐diffused InP crystals. The measurements showed that the total Zn concentration was (1.00.3)×1019/cm3 with 505% of the dopant residing on lattice sites for samples prepared by sealed‐ampoule diffusion at 700 °C with a P overpressure. Hall measurements yielded a hole concentration of (5.00.5)×1018/cm3, indicating that most of the substitutional Zn in InP is electrically active and not associated in neutral substitutional complexes as previously suggested. Fine precipitates observed by transmission electron microscopy are assumed to contain the nonsubstitutional Zn.Keywords
This publication has 13 references indexed in Scilit:
- The characterization of highly-zinc-doped InP crystalsApplied Physics Letters, 1979
- Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductorsApplied Physics Letters, 1979
- X-ray and rutherford backscattering yields from channeled helium ions in GaAsRadiation Effects, 1978
- Electrical measurements on homogeneous diffused p-type InPJournal of Physics D: Applied Physics, 1977
- Enhancement in PIXE analysisNuclear Instruments and Methods, 1977
- The electrical properties of zinc diffused indium phosphideSolid-State Electronics, 1976
- Diffusion profiles of zinc in indium phosphideJournal of Physics D: Applied Physics, 1975
- The combined use of He back-scattering and He-induced X-rays in the study of anodically grown oxide films on GaAsThin Solid Films, 1973
- The solid solubility limits of zinc in GaAs at 1000Journal of Physics and Chemistry of Solids, 1967
- Diffusion and solubility of zinc in indium phosphideSolid-State Electronics, 1964