Delineation of defects in SIMOX structures using a chemical etching technique
- 1 April 1992
- Vol. 43 (4) , 297-299
- https://doi.org/10.1016/0042-207x(92)90159-t
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A new technique for characterizing low-defect SIMOXMaterials Letters, 1990
- Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two stepsApplied Physics Letters, 1989
- The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealingJournal of Applied Physics, 1988
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972