A new technique for characterizing low-defect SIMOX
- 31 August 1990
- journal article
- Published by Elsevier in Materials Letters
- Vol. 9 (12) , 508-510
- https://doi.org/10.1016/0167-577x(90)90097-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuitsIEEE Transactions on Nuclear Science, 1988
- Nondestructive analysis of silicon-on-insulator wafersApplied Physics Letters, 1987
- Nucleation and growth of oxide precipitates in silicon implanted with oxygenThin Solid Films, 1986