Adsorption of Sb on Ge(110) studied by photoemission and scanning tunneling microscopy
- 15 October 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (15) , 8115-8120
- https://doi.org/10.1103/physrevb.44.8115
Abstract
The Ge(110) surface shows two possible reconstructions: the ‘‘16 structure’’ and the c(8×10). The adsorption of Sb on these surfaces at elevated substrate temperatures shows saturation behaviors. At 200 mDC, the Sb saturation occurs at one-monolayer (ML) coverage, and the resulting surface exhibits a (1×1) diffraction pattern. Photoemission studies of the core levels suggest that this (1×1) surface is close to being an ideal Sb-terminated surface. This is consistent with direct observations by scanning tunneling microscopy (STM). At a higher substrate temperature of 400 °C, Sb saturation of the surface results in a (3×2) diffraction pattern. An Sb coverage of 2/3 ML on this surface is determined from core-level-photoemission and Auger results. STM images for these surfaces are presented and discussed.Keywords
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