Analysis of highly doped collector transistors by using two-dimensional process/device simulation and its application of ECL circuits
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (8) , 1840-1844
- https://doi.org/10.1109/16.119023
Abstract
No abstract availableKeywords
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