An Optical Absorption Property of Highly Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5R) , 1255-1257
- https://doi.org/10.1143/jjap.31.1255
Abstract
The optical absorption property of highly beryllium (Be)-doped GaInAsP (λg=1.31 µm, p=2×1019 cm-3) grown by chemical beam epitaxy (CBE) was investigated. The absorption coefficient was estimated from the transmissivity of a Fabry-Perot resonator formed by selective etching of an InP substrate. We found a fairly large absorption (α\cong400 cm-1) in Be-doped material in the longer wavelength region (λ>1.35 µm).Keywords
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