Beryllium Doping for Ga0.47In0.53As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
- 1 July 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (7B) , L1224
- https://doi.org/10.1143/jjap.30.l1224
Abstract
High-concentration modulation doping of beryllium (Be) for GaInAs/InP quantum wells (QWs) was achieved by chemical beam epitaxy (CBE) up to 1×1019 cm-3. The modulation-doped quantum well (MD-QW) structure showed strong photoluminescence intensity. Broad-contact separate-confinement-heterostructure (SCH) QW lasers were also fabricated to evaluate the quality of MD-QWs. The measured threshold current density was 1.5-2.0 kA/cm2 for devices with 200 µm width and 200-1000 µm cavity length. High concentration and modulation doping for GaInAs/InP lasers was demonstrated.Keywords
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