Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy

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Abstract
A high P2-yield cracking cell was newly developed for chemical beam epitaxy. Dramatic improvements in crystal quality were obtained in comparison to a lesser-yield cell. The use of tantalum baffles in a PBN-made cell significantly increased the P2 yield when comparing it to a cell using PBN baffles. The growth mechanism of InP differed from cells with different P2 yields. For the same PH3 and TMI flow rates, higher growth rates and narrower photoluminescence linewidths were obtained with a higher P2 yield cell. Silicon and beryllium doping incorporation mechanisms were also found to be different with these cells.