A critical comparison of MOCVD and MBE for heterojunction devices
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 345-355
- https://doi.org/10.1016/0022-0248(84)90436-6
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- Low pressure-MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlatticesJournal of Vacuum Science & Technology B, 1983
- Molecular beam epitaxy of CdTe and CdxHg1−xTeThin Solid Films, 1982
- High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devicesJournal of Crystal Growth, 1982
- Size fluctuations and high-energy laser operation of AlxGa1−xAs-AlAs-GaAs quantum-well heterostructuresJournal of Applied Physics, 1981
- AlGaAs-GaAs lasers grown by metalorganic chemical vapor deposition — A reviewJournal of Crystal Growth, 1981
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981
- Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devicesApplied Physics Letters, 1981
- Growth conditions to achieve mobility enhancement in Al x Ga 1−x As-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970