Extremely high Be doped Ga0.47In0.53As growth by chemical beam epitaxy
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 366-370
- https://doi.org/10.1016/0022-0248(90)90387-z
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxyApplied Physics Letters, 1989
- Subpicosecond InP/InGaAs heterostructure bipolar transistorsIEEE Electron Device Letters, 1989
- From chemical vapor epitaxy to chemical beam epitaxyJournal of Crystal Growth, 1989
- GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Å) grown by chemical beam epitaxyApplied Physics Letters, 1988
- Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistorsJournal of Crystal Growth, 1987
- Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devicesJournal of Crystal Growth, 1987
- Doping studies using thermal beams in chemical-beam epitaxyJournal of Applied Physics, 1986
- Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular-beam epitaxyJournal of Applied Physics, 1981