New Achievements on CVD Based Methods for SiC Epitaxial Growth
- 1 May 2005
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 483-485, 67-72
- https://doi.org/10.4028/www.scientific.net/msf.483-485.67
Abstract
The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.Keywords
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