Measurement and modeling of charge feedthrough in n-channel MOS analog switches
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (6) , 1206-1213
- https://doi.org/10.1109/jssc.1985.1052460
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969