Electron capture coefficient of neutral indium and pair recombination in compensated silicon

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Abstract
Indium-doped silicon, well compensated with phosphorus, was illuminated in order to neutralise the indium acceptors. The photoluminescence spectra and their decays were measured for temperatures between 4K and 135K. Below about 60K the spectra showed a phosphorus-indium pair recombination which was fast and had a recombination rate constant Wmax approximately=104 s-1. Above 80K the conduction-band-indium transition dominated and gave a value for the electron capture coefficient Bca=2*10-15 cm3 s-1. Approximate quantum mechanical calculations of the radiative part of Bca were performed both for the phononless and the phonon-assisted transitions. The results of these calculations agreed within the expected accuracy with the experimental results and suggested that the electron capture of indium is a radiative process.