Microscopic study of cluster formation in the Ga on GaAs(001) system

This publication has 17 references indexed in Scilit:

• Experimental study of self-similarity in the coalescence growth regime
  Physical Review Letters, 1992
• The origins and elimination of oval defects in GaAs layers grown by molecular beam epitaxy
  Journal of Vacuum Science & Technology A, 1991
• Analysis of GaAs(001) surface stoichiometry using Monte Carlo simulations
  Surface Science, 1991
• Cluster Size Distributions in Different Temperature Regimes: The System Ga on GaAs(001)
  MRS Proceedings, 1991
• Surface Diffusion Coefficients on Stranski-Krastanov Layers
  Japanese Journal of Applied Physics, 1990
• A direction of easy diffusion on the (001) face of Ge, Si and III-V semiconductor crystals — How to verify its existence?
  Journal of Crystal Growth, 1989
• Diffusion coefficient of arsenic in gallium-rich melts at 720°C
  Thin Solid Films, 1980
• Vapour pressures of arsenic over InAs(c) and GaAs(c). The enthalpies of formation of InAs(c) and GaAs(c)
  The Journal of Chemical Thermodynamics, 1974
• Grain size distribution in thin films—1. Conservative systems
  Journal of Physics and Chemistry of Solids, 1967
• Solubilities of GaAs in Metallic Solvents
  Journal of the Electrochemical Society, 1966