Diffusion coefficient of arsenic in gallium-rich melts at 720°C
- 1 March 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 66 (2) , L3-L5
- https://doi.org/10.1016/0040-6090(80)90228-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Liquid-phase epitaxial growth of thin GaAs layers from supercooled solutionsJournal of Applied Physics, 1976
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972
- The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growthJournal of Crystal Growth, 1969
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965