Liquid-phase epitaxial growth of thin GaAs layers from supercooled solutions

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Abstract
A technique for the liquid‐phase epitaxial growth of thin GaAs layers has been developed. This technique uses supercooled solutions free from GaAs precipitates. With the amount of the initial supercooling in the range of 1–10 °C, very smooth surfaces with a roughness smaller than 0.01 μm are obtained for layers thinner than 1μm. The layer thickness data agree well with the diffusion theory equation by assuming that the diffusion coefficient of As in Ga is 4×10−5 cm2/sec at 800 °C. The thickness uniformity within a wafer is better than ±5%, and the thickness reproducibility among different runs is within ±7%. The carrier concentration is also well controlled.