Homogeneous solution grown epitaxial GaAs by tin doping
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5) , 337-340
- https://doi.org/10.1016/0038-1101(69)90088-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Determination of Deep Centers in Conducting Gallium ArsenideJournal of Applied Physics, 1966
- The Gunn effect in polar semiconductorsIEEE Transactions on Electron Devices, 1966
- Solubility and Electrical Behavior of Group IV Impurities in Solution Grown Gallium PhosphideJournal of the Electrochemical Society, 1965
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962