Thermal evolution of molybdenum disilicide grown on (100) silicon under ultrahigh vacuum conditions
- 15 April 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (8) , 2760-2764
- https://doi.org/10.1063/1.337048
Abstract
Under ultrahigh vacuum conditions, molybdenum disilicide has been obtained by electron gun evaporation of molybdenum on heated monocrystalline silicon substrate. Depending on the deposition temperature, the resulting thin film is composed of tetragonal disilicide or of a mixture of hexagonal and tetragonal disilicide. Preferential orientations of MoSi2 have been observed for both phases grown on (100) silicon substrate heated at 550, 650, and 750 °C. Further annealing does not improve the crystallographic orientation of the materials.This publication has 6 references indexed in Scilit:
- Localized epitaxial growth of hexagonal and tetragonal MoSi2 on (111) SiApplied Physics Letters, 1985
- Growth of MoSi2 with preferential orientation on (100) siliconApplied Physics Letters, 1984
- Epitaxial growth of CrSi2 on (111)SiApplied Physics Letters, 1984
- Electron microscope studies of the structure and propagation of the Pd2Si/(111)Si interfacePhilosophical Magazine A, 1982
- Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effectsJournal of Applied Physics, 1980
- Reaction of Mo Thin Films on Si (100) SurfacesJournal of the Electrochemical Society, 1980