Effect of total hydrogen content in silicon nitride sensitive film on performance of ISFET
- 1 March 1993
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 12 (1) , 23-27
- https://doi.org/10.1016/0925-4005(93)85007-w
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Hydrogen bonding configurations in silicon nitride films prepared by plasma-enhanced depositionJournal of Applied Physics, 1985
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978