ZnO tetrapod Schottky photodiodes
- 14 August 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (7) , 072104
- https://doi.org/10.1063/1.2335949
Abstract
The fabrication of an ultraviolet photodiode employing a single ZnO tetrapod nanocrystal is reported. This diode structure is prepared by depositing W and Pt electrodes to form Ohmic and Schottky contacts, respectively. Dark current-voltage measurements show rectifying behavior. The properties of the metal-semiconductor interface are studied with above and below band gap illumination. It is found that with increasing UV excitation the device converts from a rectifying to an Ohmic behavior. This effect is attributed to a flattening of the energy bands due to the migration of photogenerated carriers within the space charge region at the metal-semiconductor interface.Keywords
This publication has 23 references indexed in Scilit:
- Synthesis and characterisation of zinc oxide tetrapod nanocrystalsJournal of Physics: Conference Series, 2006
- Effects of an Electrically Conducting Layer at the Zinc Oxide SurfaceJapanese Journal of Applied Physics, 2005
- A comprehensive review of ZnO materials and devicesJournal of Applied Physics, 2005
- Ultrafast carrier dynamics in ZnO nanorodsApplied Physics Letters, 2005
- Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnONature Materials, 2004
- Excitonic fine structure and recombination dynamics in single-crystallinePhysical Review B, 2004
- Semiconducting and Piezoelectric Oxide Nanostructures Induced by Polar SurfacesAdvanced Functional Materials, 2004
- Zinc oxide nanotetrapodsNanotechnology, 2004
- Schottky-barrier height determination in the presence of interfacial disorderSemiconductor Science and Technology, 1986
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955