Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
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- 19 December 2004
- journal article
- letter
- Published by Springer Nature in Nature Materials
- Vol. 4 (1) , 42-46
- https://doi.org/10.1038/nmat1284
Abstract
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This publication has 31 references indexed in Scilit:
- P‐type doping and devices based on ZnOPhysica Status Solidi (b), 2004
- Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substratesApplied Physics Letters, 2003
- Fabrication of homostructural ZnO p–n junctions and ohmic contacts to arsenic-doped p-type ZnOApplied Physics Letters, 2003
- Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopantApplied Physics Letters, 2003
- Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region PhotodetectorsJapanese Journal of Applied Physics, 2003
- Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wellsApplied Physics Letters, 2003
- Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnOApplied Physics Letters, 2003
- Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 2002
- Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting DiodeJapanese Journal of Applied Physics, 2001
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994