Fabrication and Optoelectronic Properties of a Transparent ZnO Homostructural Light-Emitting Diode
- 1 March 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (3A) , L177
- https://doi.org/10.1143/jjap.40.l177
Abstract
A transparent ZnO homostructural light-emitting diode (LED) with a structure of Au electrode/p(i)-ZnO film/n-ZnO single crystal/In electrode was fabricated using the technique of N2O plasma-enhanced pulsed laser reactive deposition. The contact between the p(i)-ZnO layer and n-ZnO wafer was found to exhibit nonlinear and rectifying current–voltage (I–V) characteristics. A current injection emission with bluish-white light was clearly observed at room temperature, and its intensity increased with increases in the injected electric current.Keywords
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