Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO
- 15 July 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (2) , 946-956
- https://doi.org/10.1103/physrevb.28.946
Abstract
The major chemical trends in the energy levels of -bonded substitutional deep impurities in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO are predicted. N impurities (deposited on the anion site by ion implantation) appear to be candidates for producing shallow -type dopants in these materials.
Keywords
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