ZnO diode fabricated by excimer-laser doping
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Open Access
- 29 May 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (22) , 3257-3258
- https://doi.org/10.1063/1.126599
Abstract
A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.Keywords
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