Low frequency noise in p + -GaAswith non-alloyed contacts
- 31 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (7) , 600-601
- https://doi.org/10.1049/el:19940379
Abstract
Measurements of 1/f noise were performed including and excluding the influence of the contacts formed by metallic aluminum layers (MBE) deposited on the p+-type GaAs (MBE). The results show that the MBE process can produce non-alloyed ohmic contacts free of noise. The 1/f noise of bulk p+-GaAs is characterised by αlatt ≃ 5 ×10-4.Keywords
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