Origin and thermal stability of HK in FeTaN thin films

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Abstract
In this study 2000 Å FeTaN thin films are annealed at 150 °C in both longitudinal and transverse magnetic fields. Both anneals result in a decrease in H K , which is shown to be a result of interstitial N, however, the transverse anneal results in a 90° rotation of H K and a 33% larger decrease in the magnitude of H K as compared to the longitudinal anneal. Subsequent transverse field anneals show that H K is completely reversible in relatively short times at any temperature above 75 °C. Our results are consistent with the diffusion of interstitial N being responsible for the rotatable behavior of H K in FeTaN.