Gate oxide breakdown under Current Limited Constant Voltage Stress
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Ultra-thin oxide reliability has become an important issue in integrated circuit scaling. Present reliability methodology stresses oxides with a low impedance voltage source. This, though, does not represent the stress under circuit configurations, in which transistors are driven by other transistors. A Current Limited Constant Voltage Stress simulates circuit stress well. Limiting the current during the breakdown event reduces the post-breakdown conduction. Limiting the current to a sufficiently low value may prevent device failure, altogether.Keywords
This publication has 1 reference indexed in Scilit:
- Ultra-thin gate dielectrics: they break down, but do they fail?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002