Ultra-thin gate dielectrics: they break down, but do they fail?
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- 23 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Definition of dielectric breakdown for ultra thin (<2 nm) gate oxidesSolid-State Electronics, 1997
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- Soft-breakdown damage in MOSFET's due to high-density plasma etching exposureIEEE Electron Device Letters, 1996
- 1.5 nm direct-tunneling gate oxide Si MOSFET'sIEEE Transactions on Electron Devices, 1996
- Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesApplied Physics Letters, 1988