Structural Analysis and Expeimental Characteristics of High-Voltage Bipolar Transistors with Shallow Junctions

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Abstract
Presented are a structural analysis and experimental characteristics of high voltage bipolar transistors having shallow junctions formed in a dielectrically-isolated island. Structural analysis was carried out by means of computer-aided calculations for a bipolar transistor equipped with a field-plate of non-uniform oxide thickness, providing new insight into the nature of the junction-curvature-limited breakdown voltage. A 350 V bipolar transistor, as a result, with a shallow junction has been developed. Experimental high-voltage bipolar transistors exhibit characteristics suitable for use in a subscriber line interface circuit.