Interface positions measured at the lattice constant scale by Auger analysis on chemical bevels
Open Access
- 1 January 1984
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 45 (20) , 999-1005
- https://doi.org/10.1051/jphyslet:019840045020099900
Abstract
Experimental results of Auger profiles obtained on chemical bevels of hetero-epitaxial structures (InP/Gaxln1-xAs/lnP) are reported. The theoretical analysis of these results shows that the positions of the interfaces and widths of the quantum wells can be determined with an accuracy of ± one lattice spacing (ultimate limit). The evolution of the concentration gradient is also suggested. Quantum wells of ∼ 3.5 nm thick (6 lattice spacings) are well resolvedKeywords
This publication has 7 references indexed in Scilit:
- An accurate method to check chemical interfaces of epitaxial III-V compoundsApplied Physics Letters, 1982
- Electron microscopy of surfacesUltramicroscopy, 1981
- Some aspects of Auger microanalysisSurface Science, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Auger and ellipsometric study of phosphorus segregation in oxidized degenerate siliconApplied Physics Letters, 1974
- Phosphorus concentration profiles in p-doped silicon dioxide measured using Auger spectroscopyJournal of Applied Physics, 1974
- A simple model for the dependence of Auger intensities on specimen thicknessSurface Science, 1969