Auger and ellipsometric study of phosphorus segregation in oxidized degenerate silicon
- 15 February 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (4) , 200-202
- https://doi.org/10.1063/1.1655152
Abstract
Phosphorus redistribution during thermal oxidation of degenerately doped silicon was investigated using Auger electron spectroscopy and ellipsometry. Concentration profiles were determined with a combination of chemical and sputter etching techniques. A substantial phosphorus pileup was observed in the oxide in a thin layer near the ellipsometrically determined Si–SiO2 interface. Calibrated against standards of known concentration, this layer was found to contain ∼2×1021 phosphorus atoms/cm3, independent of the oxidation temperature between 850 and 1000 °C.Keywords
This publication has 6 references indexed in Scilit:
- Auger analysis of chlorine in ``HCl- or Cl2-grown'' SiO2 filmsApplied Physics Letters, 1973
- Quantitative Auger electron spectroscopy and electron rangesSurface Science, 1972
- Auger electron spectroscopySurface Science, 1971
- Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS StructureJournal of the Electrochemical Society, 1965
- Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of SiliconJournal of Applied Physics, 1964
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960