The Electronic Configuration of121Sb in Semiconductors
- 1 November 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 132 (1) , 219-223
- https://doi.org/10.1002/pssb.2221320122
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Extended x-ray-absorption fine-structure study ofrandom solid solutionsPhysical Review B, 1983
- On the Mössbauer isomer shift studies of the electronic structure of Sn implanted AIIIBV compoundsHyperfine Interactions, 1983
- Mössbauer spectroscopy of laser annealed tellurium implanted silicon (I).119Sn and125TeHyperfine Interactions, 1983
- Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive NucleiPhysical Review Letters, 1980
- New techniques at ISOLDE-2Nuclear Instruments and Methods, 1976
- Covalency effects on implanted119Sn in group IV semiconductors studied by Mössbauer and channeling experimentsHyperfine Interactions, 1975
- Mössbauer effect and lattice parameter for silicon doped with antimonySolid State Communications, 1971
- Mössbauer Spectroscopy in Group-III AntimonidesPhysical Review B, 1970
- Isomer shifts of 121Sb in III–V semiconductorsSolid State Communications, 1970