The effect of crystallization on doping efficiency in a-Si:H films
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 831-834
- https://doi.org/10.1016/0022-3093(83)90299-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterization of plasma-deposited microcrystalline siliconPhilosophical Magazine Part B, 1982
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981