Schottky diode properties and the photovoltaic behaviour of indium tin oxide (ITO)/n-GaAs junctions-effect of arsenic deficient GaAs surface
- 1 August 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (8) , 871-876
- https://doi.org/10.1088/0268-1242/5/8/012
Abstract
No abstract availableKeywords
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