Interdiffusion in alloys of the GaInAsP system

This publication has 31 references indexed in Scilit:

• Application of the charged point-defect model to diffusion and interdiffusion in GaAs
  Journal of Applied Physics, 1990
• Theoretical study of native defects and impurities in InP
  Physical Review B, 1990
• Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2 superlattices by Zn diffusion
  Applied Physics Letters, 1989
• InGaAs/InP superlattice mixing induced by Zn or Si diffusion
  Applied Physics Letters, 1988
• Diffusion mechanisms and superlattice disordering in GaAs
  Materials Science and Engineering: B, 1988
• Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures
  Applied Physics Letters, 1988
• Disorder of a Ga_xIn_1-xAs_yP_1-y-InP quantum well by Zn diffusion
  Semiconductor Science and Technology, 1987
• Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy
  Applied Physics Letters, 1987
• The Gallium-Phosphorus-Zinc Ternary Phase Diagram
  Journal of the Electrochemical Society, 1966
• Diffusion in Compound Semiconductors
  Physical Review B, 1961