V-band harmonic injection-locked frequency divider using cross-coupled FETs
- 4 October 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 14 (10) , 457-459
- https://doi.org/10.1109/lmwc.2004.834541
Abstract
A V-band 1/2 frequency divider is developed using harmonic injection-locked oscillator. The cross-coupled field effect transistors (FETs) and low quality-factor microstrip resonator are employed as a wide-band oscillator to extend the locking bandwidth. The second harmonic of free-running oscillation signal is injected to the gates of cross-coupled FETs for high-sensitivity superharmonic injection locking. The fabricated microwave monolithic integrated circuit frequency divider using 0.15-μm GaAs pHEMT process showed a maximum locking range of 7.4 GHz (from 65.1 to 72.5 GHz) under a low power dissipation of 100 mW. The maximum single-ended output power was as high as -3 dBm.Keywords
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