Quantitative Analysis for CH 3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9A) , L1117
- https://doi.org/10.1143/jjap.34.l1117
Abstract
Using cracked propane (C3H8), carbonization of a Si(001) clean surface with a (2×1) structure can be realized reproducibly at as low as 750°C in gas source molecular beam epitaxy. The carbonized layer indicates single-crystalline 3C-SiC, and surface morphology is very smooth. Methyl (CH3) radicals in a cracked-C3H8 molecular beam can be detected with a mass spectrometer utilizing a threshold ionization technique. The number of CH3 radicals is estimated, and it can reach up to 3.0×1011 cm-3 with a C3H8 flow rate of 0.8 sccm and a cracker temperature of 1200°C. Based on quantitative analysis, the condensation coefficient of CH3 radicals in carbonization is discussed.Keywords
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