A 58–65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply
Top Cited Papers
- 22 February 2010
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 45 (3) , 554-564
- https://doi.org/10.1109/jssc.2009.2039274
Abstract
A 60-GHz band, three-stage pseudo-differential power amplifier (PA) is implemented with input and output baluns on-chip. Each stage consists of a neutralized common-source amplifier pair. Neutralization mitigates the intrinsic gate-drain feedback of each transistor for increased power gain and reverse isolation. Shielded transformers couple the gain stages and allow low supply voltage operation. Fabricated in a 65-nm bulk CMOS process, the measured small-signal gain of the 0.13 × 0.41 mm2 PA is 16 dB at 60 GHz with 3-dB bandwidth more than 8.5 GHz, while consuming 50 mW from a 1-V supply. Reverse isolation is better than 42 dB from 55 to 65 GHz. Maximum saturated output power is 11.5 dBm with a peak PAE of 15.2% measured at 62 GHz; from 58 to 65 GHz, the measured PAE is above 10%.Keywords
This publication has 26 references indexed in Scilit:
- Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diodeElectrochemistry Communications, 2009
- A 90nm CMOS 60GHz RadioPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOSIEEE International Solid-State Circuits Conference, 2008
- A 95GHz Receiver with Fundamental-Frequency VCO and Static Frequency Divider in 65nm Digital CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz RadioPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS ProcessPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Shielded Passive Devices for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated CircuitsIEEE Journal of Solid-State Circuits, 2006
- Differential CMOS linear power amplifier with 2nd harmonic termination at common source nodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- MOS RF Reliability Subject to Dynamic Voltage Stress—Modeling and AnalysisIEEE Transactions on Electron Devices, 2005
- Reliability Evaluation of Class-E and Class-A Power Amplifiers With Nanoscaled CMOS TechnologyIEEE Transactions on Electron Devices, 2005