Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10R) , 5556-5561
- https://doi.org/10.1143/jjap.34.5556
Abstract
In this work, we report on the simulation and physical insight of a Schottky/two-dimensional electron gas (2DEG) silicon barrier diode using a boundary element method (BEM) for the first time. The BEM can effectively reduce the dimensions of equation systems and the computation time as compared to conventional numerical methods such as finite-element or finite-difference methods. Using an efficient algorithm for depletion layer width estimation, the potential and electric field distributions, the dependence of the depletion layer thickness on the applied voltage, and capacitance-voltage ( C-V ) characteristics of the Schottky/2DEG junction under different bias conditions are investigated. It is found that the free boundary condition along the top surface of the Schottky/2DEG barrier diode exerts a strong effect on both the electric field distribution and C-V characteristics. In addition, the calculated results show that the Schottky/2DEG diode has a high C-V nonlinearity which increases with decreasing i-Si layer thickness around the 2DEG layer.Keywords
This publication has 14 references indexed in Scilit:
- A 2-D boundary element method approach to the simulation of DMOS transistorsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1993
- Theory of junction between two-dimensional electron gas and p-type semiconductorIEEE Transactions on Electron Devices, 1992
- A two-dimensional resistance simulator using the boundary element methodIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992
- A ULSI 2-D capacitance simulator for complex structures based on actual processesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1990
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlatticeSurface Science, 1980
- Self-consistent calculations of electric subbands in p-type silicon inversion layersSurface Science, 1976
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966