Highly regular self-organization of step bunches during growth of SiGe on Si(113)
- 14 September 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (11) , 1535-1537
- https://doi.org/10.1063/1.122197
Abstract
We have studied the structural properties of highly periodic arrays of terrace steps in a Si/SiGe multilayer grown on a miscut Si(113) substrate by atomic force microscopy,x-ray reflection and high resolution x-ray diffraction. The data reveal a regular array of step bunches with vertical correlation within the multilayer and periodic surface steps extending over lengths of several tens of microns. The (113)-faceted terraces have a lateral period of about 360 nm which is locally modulated due to a long-range waviness of the surface.Keywords
This publication has 10 references indexed in Scilit:
- Oblique roughness replication in strained SiGe/Si multilayersPhysical Review B, 1998
- Anisotropic Coarsening of Periodic Grooves: Time-Resolved X-Ray ScatteringPhysical Review Letters, 1998
- Self-assembled Ge nanowires grown on Si(113)Applied Physics Letters, 1997
- Diffuse x-ray reflection from multilayers with stepped interfacesPhysical Review B, 1997
- Anomalous strong repulsive step-step interaction on slightly misoriented Si(113)Physical Review B, 1997
- Self-organized growth of quantum-dot structuresSemiconductor Science and Technology, 1996
- Step-Bunching Instability of Vicinal Surfaces under StressPhysical Review Letters, 1995
- Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfacesPhysical Review B, 1993
- Growth of Ge on Si(100) and Si(113) studied by STMSurface Science, 1992
- X-ray and neutron scattering from rough surfacesPhysical Review B, 1988