Excimer laser projection etching of GaAs
- 29 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (13) , 803-805
- https://doi.org/10.1063/1.97552
Abstract
We report the projection dry etching of GaAs using an excimer laser and HBr etching gas. Present experiments use photochemically generated reactants, which are spatially confined by gas phase collisions. Pattern transfer is accomplished by 1:1 imaging of the excimer laser light directly onto a GaAs substrate in a reaction cell filled with HBr gas. Resolution down to the laser beam image size is achieved through the addition of buffer gases.Keywords
This publication has 9 references indexed in Scilit:
- Dry, laser-assisted rapid HBr etching of GaAsApplied Physics Letters, 1985
- Excimer laser etching of Al metal films in chlorine environmentsApplied Physics Letters, 1985
- Photoeffects on the fluorination of silicon. I. Influence of doping on steady-state phenomenaThe Journal of Chemical Physics, 1983
- Crystallographic etching of GaAs with bromine and chlorine plasmasJournal of Applied Physics, 1983
- Laser Microchemistry and its Application to Electron-Device FabricationAnnual Review of Physical Chemistry, 1983
- Self-developing photoetching of poly(ethylene terephthalate) films by far-ultraviolet excimer laser radiationApplied Physics Letters, 1982
- Laser-enhanced gas–surface chemistry: Basic processes and applicationsJournal of Vacuum Science and Technology, 1982
- Electronically excited bromine atoms Br(42P½). Part 2.—Spin orbit relaxationTransactions of the Faraday Society, 1966
- Effects Due to Absorption of Laser RadiationJournal of Applied Physics, 1965