Dry, laser-assisted rapid HBr etching of GaAs
- 1 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 310-312
- https://doi.org/10.1063/1.96202
Abstract
Dry, rapid etching of GaAs has been accomplished using an excimer laser (ArF, 193 nm) with HBr etching gas by photochemical initiation. Spatially uniform etch rates of up to 8 μm/min have been achieved on large-area, masked substrates. Selective crystallographic etching is observed and controlled in the process.Keywords
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