Deep-ultraviolet induced wet etching of GaAs
- 1 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5) , 563-565
- https://doi.org/10.1063/1.95281
Abstract
We report on deep-ultraviolet (UV), light-assisted wet etching of GaAs. The etching chemistry differs from that using visible wavelengths and all doping types of GaAs can be efficiently etched. The UV processing offers rapid etching at low, nonthermal laser intensities and permits very deep, vertical features to be made.Keywords
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