Laser-controlled etching of chromium-doped 〈100〉 GaAs
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6) , 530-532
- https://doi.org/10.1063/1.93994
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Localized laser etching of compound semiconductors in aqueous solutionApplied Physics Letters, 1982
- Photoelectrochemical etching of p-GaAsApplied Physics Letters, 1981
- Voltage-controlled photoetching of GaAsApplied Physics Letters, 1981
- Laser-photoinduced etching of semiconductors and metalsApplied Physics Letters, 1980
- Thermodynamic stabilities of semiconductor electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1979
- Electrolytic decomposition and photodecomposition of compound semiconductors in contact with electrolytesJournal of Vacuum Science and Technology, 1978
- Photoetching of InP mesas for production of mm-wave transferred-electron oscillatorsElectronics Letters, 1977
- Anodic Dissolution of N‐Type Gallium Arsenide under IlluminationJournal of the Electrochemical Society, 1975
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972
- Interband Transitions in Groups 4, 3-5, and 2-6 SemiconductorsPhysical Review Letters, 1962