Laser-photoinduced etching of semiconductors and metals
- 15 August 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (4) , 344-346
- https://doi.org/10.1063/1.91941
Abstract
Etched patterns with submicron resolution have been produced using laser‐induced photodissociation of dissolved and complexed halogens in liquid solution. Tentative mechanisms for this photoinduced dissociation process are presented.Keywords
This publication has 7 references indexed in Scilit:
- Laser photodeposition of metal films with microscopic featuresApplied Physics Letters, 1979
- Effect of the laser radiation intensity on the kinetics of the heterogeneous photochemical reaction between single-crystal germanium and bromine gasSoviet Journal of Quantum Electronics, 1978
- Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon SubstratesJournal of the Electrochemical Society, 1963
- An Electropolishing Technique for Germanium and SiliconJournal of the Electrochemical Society, 1963
- Primary Quantum Yield for the Dissociation of Iodine Molecules in Carbon Tetrachloride Solution and the Rate Constant for the Recombination Reaction1Journal of the American Chemical Society, 1957
- The Approximate Rate of Exchange between Iodine Atoms and MoleculesThe Journal of Chemical Physics, 1950
- Properties of illuminated iodine solutions. I. Photochemical dissociation of iodine molecules in solutionTransactions of the Faraday Society, 1936