RIE of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and silicon-germanium
- 30 April 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 21 (1-4) , 311-314
- https://doi.org/10.1016/0167-9317(93)90080-o
Abstract
No abstract availableKeywords
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