Defect density variation with deposition rate in snsb thin films from annealing study of electrical resistance
- 1 January 1977
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 38 (2) , 167-174
- https://doi.org/10.1016/0022-3697(77)90161-5
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Annealing and thickness effects on the electrical resistance of vacuum-deposited tin antimonide alloy filmsThin Solid Films, 1974
- Structure and orientation of tin antimonide films grown by vacuum depositionThin Solid Films, 1972
- EPITAXIAL GROWTH OF SPUTTERED SILVER FILMS AT LOW TEMPERATURESApplied Physics Letters, 1966
- The formation of imperfections in epitaxial gold filmsPhilosophical Magazine, 1966
- Behavior of Film Conductance during Vacuum DepositionJournal of Applied Physics, 1963
- Defects in silver films prepared by evaporation of the metal onto micaPhilosophical Magazine, 1962
- A study of growth defects in face-centred cubic metal foils prepared by evaporationPhilosophical Magazine, 1959
- Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°KPhysical Review B, 1956
- The study of epitaxy in thin surface filmsAdvances in Physics, 1956
- Kinetics of Processes Distributed in Activation EnergyPhysical Review B, 1955