Electronic properties of ionic insulators on semiconductor surfaces: Alkali fluorides on GaAs(100)

15 August 1989

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 40 (5) , 3301-3305
https://doi.org/10.1103/physrevb.40.3301

Abstract

Photoelectron core-level spectra are measured for the interfaces RbF/GaAs(100) and LiF/GaAs(100). It is found that RbF, of which the lattice almost matches the GaAs lattice, is epi- taxially grown and a F-Ga interface bonding was observed. LiF with a large mismatch to GaAs dissociates after annealing the surface and induces a reconstruction of the GaAs surface. We discuss the present results as compared with our previous investigations of NaF and KF on the same GaAs(100) surface.

Keywords

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