Indirect trench sidewall doping by implantation of reflected ions
- 17 April 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (16) , 1534-1536
- https://doi.org/10.1063/1.101342
Abstract
Ion implantation (i/i) technology is employed for silicon trench sidewall doping. The aspect ratio of trenches for high Mbit DRAM is very large (depth/width≥10), so that very small glancing-angle i/i to sidewalls is necessary. In this case, reflected ions are large in number and are implanted to the opposite sidewall. It is very important to know the elemental depth profile in the opposite sidewall to understand the implantation mechanism. For the first time, we measured the depth profiles at several positions of the opposite trench sidewall by secondary-ion mass spectroscopy for arsenic and boron ion implantations. It is found that reflected ions are distributed near the facing region of the directly implanted region with smaller energies than the primary energy. These findings are compared with the simulations based on the marlowe program.Keywords
This publication has 2 references indexed in Scilit:
- Ion implantation into three-dimensional structuresNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Depth Profiles of Boron Atoms with Large Tilt‐Angle ImplantationsJournal of the Electrochemical Society, 1986